Target temperature dependence of sheet resistivity and structure of Ar-implanted diamonds

摘要: Abstract A study has been made of the electrical properties and structure Ar-implanted diamonds depending on target temperature during Ar implantation. 150 keV implantation into natural kept at a ranging from −60 to 300 °C was performed with doses 1 × 10 15 −5 16 ions/cm 2 . The sheet resistivity measured by four point probe method surface investigated laser Raman spectroscopy. decrease in related increase dose different between temperatures two orders magnitude; critical dividing typical values nearly equal room temperature. spectra showed that is amorphous for low disordered graphite including zones high It concluded plays an important role forming structures implanted change resistivity.