Nondestructive analysis of Hg1−xCdxTe (x=0.00, 0.20, 0.29, and 1.00) by spectroscopic ellipsometry. II. Substrate, oxide, and interface properties

摘要: Properties of Hg1−x CdxTe substrates, their electrochemically grown anodic oxides, and interfaces are studied under as‐grown conditions using the nondestructive analytic capabilities spectroscopic ellipsometry to avoid ambiguities arising from destructive techniques. Pseudodielectric functions that most accurate representations intrinsic bulk responses we able achieve given for each materials studied. The dielectric oxides calculated (tan ψ, cos Δ) data in a three‐phase model. These uniform with sharp at both substrate ambient. Residual Te layers thicknesses order 6%–8% initial oxide found on Hg‐containing substrates after native stripped HCl. Four‐phase model calculations show these not present (±2 A) condition therefore cannot be invoked explain leakage integra...