Atomic Layer Deposition of Platinum Thin Films
作者： Titta Aaltonen , Mikko Ritala , Timo Sajavaara , Juhani Keinonen , Markku Leskelä
DOI: 10.1021/CM021333T
关键词:
摘要: Platinum thin films were grown at 300 °C by atomic layer deposition (ALD) using (methylcyclopentadienyl)trimethylplatinum (MeCpPtMe3) and oxygen as precursors. The had excellent uniformity, low resistivity, low-impurity contents. Structural studies X-ray diffraction showed that the strongly (111) oriented. Growth rates of 0.45 A cycle-1 obtained with 4 s total cycle times. film thickness was found to linearly depend on number reaction cycles. Also, possible mechanism is discussed.
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