The investigation of InGaAs quantum dot growth peculiarities for GaAs intermediate band solar cells

作者: R A Salii , S A Mintairov , M A Mintairov , A M Nadtochiy , M Z Shvarts

DOI: 10.1088/1742-6596/1038/1/012110

关键词:

摘要:

参考文章(7)
Antonio Luque, Antonio Martí, Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Physical Review Letters. ,vol. 78, pp. 5014- 5017 ,(1997) , 10.1103/PHYSREVLETT.78.5014
S. M. Hubbard, C. D. Cress, C. G. Bailey, R. P. Raffaelle, S. G. Bailey, D. M. Wilt, Effect of strain compensation on quantum dot enhanced GaAs solar cells Applied Physics Letters. ,vol. 92, pp. 123512- ,(2008) , 10.1063/1.2903699
S. A. Blokhin, A. V. Sakharov, A. M. Nadtochy, A. S. Pauysov, M. V. Maximov, N. N. Ledentsov, A. R. Kovsh, S. S. Mikhrin, V. M. Lantratov, S. A. Mintairov, N. A. Kaluzhniy, M. Z. Shvarts, AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs Semiconductors. ,vol. 43, pp. 514- 518 ,(2009) , 10.1134/S1063782609040204
A. Marti, L. Cuadra, A. Luque, Quasi-drift diffusion model for the quantum dot intermediate band solar cell IEEE Transactions on Electron Devices. ,vol. 49, pp. 1632- 1639 ,(2002) , 10.1109/TED.2002.802642
R. A. Salii, S. A. Mintairov, P. N. Brunkov, A. M. Nadtochiy, A. S. Payusov, N. A. Kalyuzhnyy, Determination of the technological growth parameters in the InAs-GaAs system for the MOCVD synthesis of “Multimodal” InAs QDs Semiconductors. ,vol. 49, pp. 1111- 1118 ,(2015) , 10.1134/S1063782615080175
Nikolay A. Kalyuzhnyy, Sergey A. Mintairov, Roman A. Salii, Alexey M. Nadtochiy, Alexey S. Payusov, Pavel N. Brunkov, Vladimir N. Nevedomsky, Maxim Z. Shvarts, Antonio Martí, Viacheslav M. Andreev, Antonio Luque, Increasing the quantum efficiency of InAs/GaAs QD arrays for solar cells grown by MOVPE without using strain‐balance technology Progress in Photovoltaics. ,vol. 24, pp. 1261- 1271 ,(2016) , 10.1002/PIP.2789
Antonio Luque, Alexander Virgil Mellor, Photon Absorption Models in Nanostructured Semiconductor Solar Cells and Devices Springer International Publishing. ,(2015) , 10.1007/978-3-319-14538-9