Comparative analysis of the optical and physical properties of InAs and In 0.8 Ga 0.2 As quantum dots
作者： R A Salii , M A Mintairov , S A Mintairov , A M Nadtochiy , N A Kalyuzhnyy
DOI: 10.1088/1742-6596/1697/1/012107
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摘要: Heterostructures with embedded layers of single InAs and In 0.8 Ga 0.2 As quantum dots (QDs) in a GaAs matrix have been obtained by metalorganic vapor-phase epitaxy. The …
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