Stimulated IR emission by quantum magnetoelectric photoeffect of narrow-gap semiconductors

摘要: A new type of lasing action bulk semiconductors which are tunable in the quantum limit has been demonstrated n-InSb. The population inversion achieved by passing a DC current J through sample subjected to transverse high magnetic field H up 22 T. At limit, critical density Jc for becomes as low e.g. ~17 A/cm2 = 10 T at 43 K, owing extremely value gain, originates from singularity one-dimension-like states caused application fields. It pointed out that small number electrons populated occasionally energy can trigger impact ionisation cause inversion, acquiring kinetic Δɛ, is larger than optical-phonon planckωop, electromagnetic excitation process closely related reduction bandgap energy, ~–Δɛ, observed crossed electric and fields limit. Emission spectroscopy effectively applied determine band parameters room temperature well temperatures.