Bistable resistance switching of poly(N-vinylcarbazole) films for nonvolatile memory applications
作者： Yi-Sheng Lai , Chia-Hsun Tu , Dim-Lee Kwong , J. S. Chen
DOI: 10.1063/1.2051801
关键词:
摘要: Poly(N-vinylcarbazole) (PVK) has been fabricated by spin-coating to show the bistable resistance switching characteristics. Various states can be made controlling on-state current through PVK films. The of films also affects turn-off current, which needs erase on state. filament theory is used elucidate observed phenomenon. We demonstrate that exhibit good retention and stable “read-write-read-erase” cyclic a behavior with on-off ratio 104, will potential material for nonvolatile memory application.
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sci-hub.se 参考文章(12)
K. Mizuuchi, A. Morikawa, T. Sugita, K. Yamamoto, Electric-field poling in Mg-doped LiNbO3 Journal of Applied Physics. ,vol. 96, pp. 6585- 6590 ,(2004) , 10.1063/1.1811391
Swarup K. Majee, Anirban Bandyopadhyay, Amlan J. Pal, Electrical bistability in molecular films: transition from memory to threshold switching Chemical Physics Letters. ,vol. 399, pp. 284- 288 ,(2004) , 10.1016/J.CPLETT.2004.10.033
Q. Ling, Y. Song, S. J. Ding, C. Zhu, D. S. H. Chan, D.-L. Kwong, E.-T. Kang, K.-G. Neoh, Non‐Volatile Polymer Memory Device Based on a Novel Copolymer of N‐Vinylcarbazole and Eu‐Complexed Vinylbenzoate Advanced Materials. ,vol. 17, pp. 455- 459 ,(2005) , 10.1002/ADMA.200401048
M. J. Rozenberg, I. H. Inoue, M. J. Sánchez, Nonvolatile Memory with Multilevel Switching: A Basic Model Physical Review Letters. ,vol. 92, pp. 178302- ,(2004) , 10.1103/PHYSREVLETT.92.178302
Jun He, Liping Ma, Jianhua Wu, Yang Yang, Three-terminal organic memory devices Journal of Applied Physics. ,vol. 97, pp. 064507- ,(2005) , 10.1063/1.1866496
Rickard Fors, Sergey I. Khartsev, Alexander M. Grishin, Giant resistance switching in metal-insulator-manganite junctions : Evidence for Mott transition Physical Review B. ,vol. 71, pp. 045305- ,(2005) , 10.1103/PHYSREVB.71.045305
S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D.-S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J.-S. Kim, J. S. Choi, B. H. Park, Reproducible resistance switching in polycrystalline NiO films Applied Physics Letters. ,vol. 85, pp. 5655- 5657 ,(2004) , 10.1063/1.1831560
Hiroshi Miyasaka, Sazzadur R. Khan, Akira Itaya, Solvent Effect of the Hole Migration along a Poly(N-vinylcarbazole) Chain as Revealed by Picosecond Transient Absorption and Dichroism Measurements† Journal of Physical Chemistry A. ,vol. 106, pp. 2192- 2199 ,(2002) , 10.1021/JP0125101
H. Akoh, Y. Kawazoe, Y. Tokura, A. Sawa, M. Kawasaki, T. Fujii, Hysteretic current–voltage characteristics and resistance switching at an epitaxial oxide Schottky junction SrRuO3∕SrTi0.99Nb0.01O3 Applied Physics Letters. ,vol. 86, pp. 012107- ,(2005) , 10.1063/1.1845598
G Dearnaley, A M Stoneham, D V Morgan, Electrical phenomena in amorphous oxide films Reports on Progress in Physics. ,vol. 33, pp. 1129- 1191 ,(1970) , 10.1088/0034-4885/33/3/306