Investigation of gate edge effect on interface trap density in 3C–SiC MOS capacitors
作者： T. Gutt , T. Małachowski , H.M. Przewłocki , O. Engström , M. Bakowski
DOI: 10.1016/J.MSEB.2012.03.007
关键词:
摘要: Abstract This paper reports on investigation of the gate edge effect interface trap density characteristics 3C–SiC MOS capacitors fabricated using four different materials and two SiO 2 oxide preparation methods. Non-uniform distribution densities under was demonstrated by presence effect, i.e. dependence D it ( E ) ratio perimeter to its area. The strength in gate/oxide material combinations studied found that depends thermal expansion coefficient adhesion layer layer. behaviour at shallow energy levels (0.25 eV) attributed reaction P b -centres mechanical stress. deeper documented but could not be explained this study.
chalmers.se
elsevier.com
sci-hub.se 参考文章(15)
Ya Yang, Hong Qiu, Xiaobai Chen, Mingpeng Yu, Characteristics of Ni films deposited on SiO2/Si(1 0 0) and MgO(0 0 1) by direct current magnetron sputtering system with the oblique target Applied Surface Science. ,vol. 255, pp. 6226- 6231 ,(2009) , 10.1016/J.APSUSC.2009.01.085
Kodigala Subba Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, D. Johnstone, S. Akarca-Biyikli, Growth and characterization of SiC epitaxial layers on Si- and C-face 4H SiC substrates by chemical-vapor deposition Journal of Applied Physics. ,vol. 98, pp. 106108- ,(2005) , 10.1063/1.2132520
C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, E. F. Schubert, Effect of C∕Si ratio on deep levels in epitaxial 4H–SiC Applied Physics Letters. ,vol. 88, pp. 121914- ,(2006) , 10.1063/1.2161388
Haruna Tada, Amy E. Kumpel, Richard E. Lathrop, John B. Slanina, Patricia Nieva, Paul Zavracky, Ioannis N. Miaoulis, Peter Y. Wong, Thermal expansion coefficient of polycrystalline silicon and silicon dioxide thin films at high temperatures Journal of Applied Physics. ,vol. 87, pp. 4189- 4193 ,(2000) , 10.1063/1.373050
M. A. George, Q. C. Bao, I. W. Sorensen, W. S. Glaunsinger, T. Thundat, Thermally induced changes in the resistance, microstructure, and adhesion of thin gold films on Si/SiO2 substrates Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. ,vol. 8, pp. 1491- 1497 ,(1990) , 10.1116/1.576863
D. Pierreux, A. Stesmans, R.J. Jaccodine, M.-T. Lin, T.J. Delph, Electron spin resonance study of the effect of applied stress during thermal oxidation of (111)Si on inherent P b interface defects Microelectronic Engineering. ,vol. 72, pp. 76- 80 ,(2004) , 10.1016/J.MEE.2003.12.019
C. H. Bjorkman, J. T. Fitch, G. Lucovsky, Correlation between midgap interface state density and thickness‐averaged oxide stress and strain at Si/SiO2 interfaces formed by thermal oxidation of Si Applied Physics Letters. ,vol. 56, pp. 1983- 1985 ,(1990) , 10.1063/1.103228
Sima Dimitrijev, Philippe Jamet, Advances in SiC power MOSFET technology Microelectronics Reliability. ,vol. 43, pp. 225- 233 ,(2003) , 10.1016/S0026-2714(02)00270-6
Y. Hijikata, H. Yaguchi, M. Yoshikawa, S. Yoshida, Composition analysis of SiO2/SiC interfaces by electron spectroscopic measurements using slope-shaped oxide films Applied Surface Science. ,vol. 184, pp. 161- 166 ,(2001) , 10.1016/S0169-4332(01)00491-3
Chia-Nan Lin, Yi-Lin Yang, Wei-Ting Chen, Shang-Chih Lin, Kai-Chieh Chuang, Jenn-Gwo Hwu, Effect of strain-temperature stress on MOS structure with ultra-thin gate oxide Microelectronic Engineering. ,vol. 85, pp. 1915- 1919 ,(2008) , 10.1016/J.MEE.2008.06.010