Method of manufacturing a semiconductor device including separation by physical force
作者： Hidekazu Takahashi , Eiji Sugiyama , Kyosuke Ito , Daiki Yamada , Yoshitaka Dozen
DOI:
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摘要: The semiconductor device of the invention includes a transistor, an insulating layer provided over first conductive (corresponding to source wire or drain wire) electrically connected region transistor through opening portion in layer, resin and containing particles which is substrate with second serving as antenna. In having above-described structure, interposed therebetween. addition, layer.
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