Memory device and manufacturing method
作者： Kuang Yeu Hsieh , ChiaHua Ho , Erh-Kun Lai
DOI:
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摘要: A memory device includes first and second electrodes separated by an insulating member comprising upwardly inwardly tapering surfaces connected a surface segment. bridge, material, such as phase change switchable between electrical property states the application of energy, is positioned across segment in contact with to define inter-electrode path defined at least part length According method for making cell device, may be created depositing dielectric material cap using high density plasma (HDP) deposition procedure. The he planarized create on material. At one step planarizing controlled so that within chosen dimensional range, 10 nm 100 nm.
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