Phase change memory device capable of reducing disturbance and fabrication method thereof

摘要: A phase change memory device capable of reducing disturbances between adjacent PRAM cells and a fabrication method are presented. The includes word lines, heating electrodes, an interlayer insulating layer, lines. lines formed on semiconductor substrate extend in parallel with constant space. electrodes electrically connected to the plurality layer insulates electrodes. direction orthogonal line Curves surface such that effective length is larger than physical distance