Phase change memory device and method of manufacturing the device
作者： Tsutomu Hayakawa
DOI:
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摘要: The invention provides a novel structure of phase change memory device. In the device invention, an electrode acting as radiating fin does not exit immediately above area layer ( 115 ). A heater 111 ) and landing 113 a, 114 both contact bottom made GST. contacts to partially overlap in region off from portion face (Y) electrode. 116, 118 is directly connected GST or like exist below
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