Thin oxide fuse
作者： Tarsaim L. Batra , Sun Chiao , Chen Wang
DOI:
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摘要: An oxide fuse, and method of forming same, formed by a thin layer dielectric between lower electrode substrate an upper electrode. A fuse-programming bias approximately 15V causes Fowler-Nordheim tunneling at low temperature to damage the layer, shorts electrodes together. The is advantageously simultaneously with gate in EEPROM.
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