A stack/trench diode for use with a multi-state material in a non-volatile memory cell
作者： Fernando Gonzales , Ray Turi
DOI:
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摘要: The invention provides a vertically oriented diode for use in delivering large amounts of current to variable resistance element multi-state memory cell. vertical is disposed container (20) extending downwardly from the top tall oxide stack into deep trench single crystal silicon. formed combination and/or polycrystalline silicon layers (22, 24) inside container. above complete construction surface area capable generating very flow through element, as required programming. In this way, highly effective can be created without requiring substrate space normally associated with such diodes.
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