High-K materials and metal gates for CMOS applications
作者： John Robertson , Robert M. Wallace
DOI: 10.1016/J.MSER.2014.11.001
关键词:
摘要: … We review that progress in this article, with an emphasis on the key developments in the high-K/… It is more than a decade since high-K gate dielectric research for Si-based transistor …
elsevier.com
sci-hub.se 参考文章(317)
Dominik Fischer, Alfred Kersch, The effect of dopants on the dielectric constant of HfO2 and ZrO2 from first principles Applied Physics Letters. ,vol. 92, pp. 012908- ,(2008) , 10.1063/1.2828696
S. Sayan, E. Garfunkel, S. Suzer, Soft x-ray photoemission studies of the HfO2/SiO2/Si system Applied Physics Letters. ,vol. 80, pp. 2135- 2137 ,(2002) , 10.1063/1.1450049
A. Kerber, E. Cartier, L. Pantisano, R. Degraeve, T. Kauerauf, Y. Kim, A. Hou, G. Groeseneken, H.E. Maes, U. Schwalke, Origin of the threshold voltage instability in SiO 2 /HfO 2 dual layer gate dielectrics IEEE Electron Device Letters. ,vol. 24, pp. 87- 89 ,(2003) , 10.1109/LED.2003.808844
V. V. Afanas’ev, A. Stesmans, M. Passlack, N. Medendorp, Band offsets at the interfaces of GaAs(100) with GdxGa0.4-xO0.6 insulators Applied Physics Letters. ,vol. 85, pp. 597- 599 ,(2004) , 10.1063/1.1771805
M. Houssa, G. Pourtois, M. Caymax, M. Meuris, M. M. Heyns, V. V. Afanas’ev, A. Stesmans, Ge dangling bonds at the (100)Ge/GeO2 interface and the viscoelastic properties of GeO2 Applied Physics Letters. ,vol. 93, pp. 161909- ,(2008) , 10.1063/1.3006320
E. P. Gusev, C. P. D’Emic, Charge detrapping in HfO2 high-κ gate dielectric stacks Applied Physics Letters. ,vol. 83, pp. 5223- 5225 ,(2003) , 10.1063/1.1633332
D. J. Webb, R. Germann, J. Fompeyrine, K. Babich, J. W. Seo, Ch. Dieker, M. Sousa, C. Rossel, C. Marchiori, H. Siegwart, D. Caimi, J.-P. Locquet, Optical properties of epitaxial SrHfO3 thin films grown on Si Journal of Applied Physics. ,vol. 102, pp. 104103- ,(2007) , 10.1063/1.2812425
Ka Xiong, John Robertson, Oxygen vacancies in high dielectric constant oxides La2O3, Lu2O3, and LaLuO3 Applied Physics Letters. ,vol. 95, pp. 022903- ,(2009) , 10.1063/1.3176214
R. Ludeke, M. T. Cuberes, E. Cartier, Local transport and trapping issues in Al2O3 gate oxide structures Applied Physics Letters. ,vol. 76, pp. 2886- 2888 ,(2000) , 10.1063/1.126506
J. Kwo, M. Hong, A. R. Kortan, K. T. Queeney, Y. J. Chabal, J. P. Mannaerts, T. Boone, J. J. Krajewski, A. M. Sergent, J. M. Rosamilia, High ε gate dielectrics Gd2O3 and Y2O3 for silicon Applied Physics Letters. ,vol. 77, pp. 130- 132 ,(2000) , 10.1063/1.126899