Experimental investigation of the band edge anisotropy of the β-FeSi2 semiconductor
作者： Maya Marinova , Mitra Baleva , Ekaterina Goranova
DOI: 10.1016/J.SOLIDSTATESCIENCES.2008.01.003
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摘要: Abstract Samples prepared by ion-beam synthesis are studied. A two-step 56 Fe + ion implantation process was performed on n-type Si wafers with (100) orientation. Subsequently, the samples, implanted same dose and energies, were subjected to rapid thermal annealing at two different temperatures – 800 °C 900 °C for time 90 s. remarkable difference in infrared spectra refractive index dispersions near band edge of samples annealed found. The behaviour optical properties related morphology samples.
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