作者: V. Darakchieva , M. Baleva , M. Surtchev , E. Goranova
DOI: 10.1103/PHYSREVB.62.13057
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摘要: The $\ensuremath{\beta}\ensuremath{-}{\mathrm{FeSi}}_{2}$ phase was fabricated using two different techniques: ion-beam synthesis and solid-state reaction of a thin Fe layer with Si substrate. crystal structure the films investigated by grazing incident asymmetric x-ray diffraction. generalized matrix method used to obtain dispersions absorption coefficient $\ensuremath{\alpha}(E)$ refractive index $n(E)$ from experimental transmittance reflectance spectra, accounting for surface interface roughness. From dependences direct band-gap energy, ${E}_{g}=0.80$ eV determined. When interpreting quantitatively dependences, Burstein-Moss effect considered.