Structural and optical analysis of β − FeSi 2 thin layers prepared by ion-beam synthesis and solid-state reaction

作者: V. Darakchieva , M. Baleva , M. Surtchev , E. Goranova

DOI: 10.1103/PHYSREVB.62.13057

关键词:

摘要: The $\ensuremath{\beta}\ensuremath{-}{\mathrm{FeSi}}_{2}$ phase was fabricated using two different techniques: ion-beam synthesis and solid-state reaction of a thin Fe layer with Si substrate. crystal structure the films investigated by grazing incident asymmetric x-ray diffraction. generalized matrix method used to obtain dispersions absorption coefficient $\ensuremath{\alpha}(E)$ refractive index $n(E)$ from experimental transmittance reflectance spectra, accounting for surface interface roughness. From dependences direct band-gap energy, ${E}_{g}=0.80$ eV determined. When interpreting quantitatively dependences, Burstein-Moss effect considered.

参考文章(26)
K. Radermacher, R. Carius, S. Mantl, Optical and electrical properties of buried semiconducting ß-FeSL Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. ,vol. 84, pp. 163- 167 ,(1994) , 10.1016/0168-583X(94)95746-0
C. H. Olk, S. M. Yalisove, G. L. Doll, DEFECT-INDUCED ABSORPTION-BAND-EDGE VALUES IN BETA -FESI2 Physical Review B. ,vol. 52, pp. 1692- 1697 ,(1995) , 10.1103/PHYSREVB.52.1692
C. Giannini, S. Lagomarsino, F. Scarinci, P. Castrucci, Nature of the band gap of polycrystalline beta -FeSi2 films. Physical Review B. ,vol. 45, pp. 8822- 8824 ,(1992) , 10.1103/PHYSREVB.45.8822
C. A. Dimitriadis, J. H. Werner, S. Logothetidis, M. Stutzmann, J. Weber, R. Nesper, Electronic properties of semiconducting FeSi2 films Journal of Applied Physics. ,vol. 68, pp. 1726- 1734 ,(1990) , 10.1063/1.346601
Z Yang, KP Homewood, MS Finney, MA Harry, KJ Reeson, None, Optical absorption study of ion beam synthesized polycrystalline semiconducting FeSi2 Journal of Applied Physics. ,vol. 78, pp. 1958- 1963 ,(1995) , 10.1063/1.360167
Ch. Stuhlmann, J. Schmidt, H. Ibach, Semiconducting iron disilicide films on Si(111): A high resolution electron energy loss spectroscopy study Journal of Applied Physics. ,vol. 72, pp. 5905- 5911 ,(1992) , 10.1063/1.351898
M. Ožvold, V. Boháč, V. Gašparík, G. Leggieri, Š. Luby, A. Luches, E. Majková, P. Mrafko, The optical band gap of semiconducting iron disilicide thin films Thin Solid Films. ,vol. 263, pp. 92- 98 ,(1995) , 10.1016/0040-6090(95)06544-X
Lianwei Wang, Chenglu Lin, Xiang dong Chen, Shichang Zou, Linhong Qin, Hongtao Shi, W.Z. Shen, M. Östling, A clarification of optical transition of β-FeSi2 film Solid State Communications. ,vol. 97, pp. 385- 388 ,(1996) , 10.1016/0038-1098(95)00659-1
N. Kobayashi, H. Katsumata, H.L. Shen, M. Hasegawa, Y. Makita, H. Shibata, S. Kimura, A. Obara, S. Uekusa, T. Hatano, Structural and optical characterization of β-FeSi2 layers on Si formed by ion beam synthesis Thin Solid Films. ,vol. 270, pp. 406- 410 ,(1995) , 10.1016/0040-6090(95)06723-X
A. B. Filonov, D. B. Migas, V. L. Shaposhnikov, N. N. Dorozhkin, G. V. Petrov, V. E. Borisenko, W. Henrion, H. Lange, Electronic and related properties of crystalline semiconducting iron disilicide Journal of Applied Physics. ,vol. 79, pp. 7708- 7712 ,(1996) , 10.1063/1.362436