Origin and Incorporation Mechanism for Oxygen Contaminants in a-Si:H and μc-Si:H Films Prepared by the Very High Frequency (70 MHz) Glow Discharge Technique
作者： U. Kroll , J. Meier , H. Keppner , S. D. Littlewood , I. E. Kelly
DOI: 10.1557/PROC-377-39
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摘要: Note: IMT-NE Number: 199 Reference PV-LAB-ARTICLE-1995-008 Record created on 2009-02-10, modified 2017-05-10
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