Growth of Micro-Crystalline SI:H and (SI,GE):H on Polyimide Substrates using ECR Deposition Techniques

摘要: The authors report on the growth of good quality micro-crystalline Si:H and (Si,Ge):H films polyamide substrates using a remote plasma ECR deposition technique. They find that under conditions lead to significant ion bombardment substrate, are microcrystalline even at relatively low temperatures about 250 C. A critical factor in inducing microcrystallinity is presence metal coating layer polyamide. In absence such coating, amorphous, probably because uncoated substrate charges up prevents any further bombardment. was measured both Raman spectroscopy by studying activation energy low-energy absorption coefficient films. sub-gap found follow crystalline Si curve quite well. addition germane gas phase shifted smaller energies.