作者: J. Meier , R. Flückiger , H. Keppner , A. Shah
DOI: 10.1063/1.112183
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摘要: Complete μc‐Si:H p‐i‐n solar cells have been prepared by the very high frequency glow discharge method. Up to now, intrinsic has never attracted much attention as a photovoltaic active material. However, an efficiency of 4.6% and remarkably short circuit current densities up 21.9 mA/cm2 due enhanced absorption in near‐infrared could be obtained. First light‐soaking experiments indicate no degradation for entirely cells. Voltage‐dependent spectral response measurements suggest that carrier transport complete may possibly cosupported diffusion (in addition drift).