Effects of Various Hydrogen Dilution Ratios on the Performance of Thin Film Nanocrystalline/Crystalline Silicon Solar Cells

摘要: Low temperature growth of hydrogenated nanocrystalline silicon film (nc-Si:H) by microwave electron cyclotron resonance chemical vapor deposition has been performed employing a double dilution silane, using He carrier for SiH4 and its subsequent H2. A series Raman spectra AFM pictures shown that very thin (<100A) nc-Si:H layer initially grown with high H2 on glass substrate can serve as seed the lower dilution, which results in higher crystallinity whole film. The role this low junction formation examined insertion between interface both (deposited dilution)/c-Si a-Si:H/c-Si heterojunction type photovoltaic cells. This is to address knowledge device's performance strongly influenced quality silicon/crystalline interface. Various thicknesses ratios have used find optimized condition providing best maximum efficiency 10.5% (Jsc=35.1mA/cm2, Voc=0.51V FF=0.59) obtained, without an AR coating, successive four different crystalline substrate. potentially low-temperature, low-cost solar cell fabrication process.