Processing and properties of ferroelectric relaxor lead scandium tantalate Pb(Sc1/2Ta1/2)O3 thin films
作者： K. Brinkman , Y. Wang , M. Cantoni , D. Su , N. Setter
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摘要: Thin films of Pb(Sc1/2Ta1/2)O3 (PST) were fabricated using an optimized chemical solution deposition procedure involving the de-hydration scandium acetate and addition up to 30% excess lead in solution. The choice substrate was found impact thermal induced stress as confirmed by wafer bending in-plane grazing angle x-ray diffraction measurements. presence either a compressive or tensile led reduction temperature dielectric maximum, whereas value maximum remained relatively unchanged; its reduced order magnitude compared with ceramic samples. It is concluded that mechanical alone not sole factor PST thin film permittivity. Microstructural features resulting from processing defects incomplete transformation relaxor state may be responsible for this commonly observed phenomenon.
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