Charge transport mechanisms and density of interface traps in MnZnO/p-Si diodes

摘要: Abstract MnZnO films were grown onto p-Si substrate by sol–gel spin coating method. The electrical properties of the diodes investigated at room temperature via current–voltage ( I–V ), capacitance–voltage–frequency C–V–f and conductance—voltage–frequency G–V–f) methods considering effect interface trap density D it ) series resistance R s diodes. rectifying ratio (RR) values undoped Mn-doped ZnO/p-Si (at ±4 V) found to be 275 2031, respectively. Mn doping decreases leakage current increases shunt sh ). Also, reasons discrepancies in barrier height determined from different discussed. C–V G–V measurements performed various frequencies. We observe additional contribution capacitance low frequencies due traps which can follow ac test signal easily. Hill–Coleman method was also presented for making comparison. vary 9.24 × 10 11 1.67 × 10 13  eV −1  cm −2 2.06 × 10 2.54 × 10 12 diodes,