Relations between the T 0 values of bulk and quantum-well GaAs
作者： A. Haug
DOI: 10.1007/BF00692316
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摘要: A simple calculation of the threshold current densityJth quantum-well and bulk GaAs lasers shows that it is proportional to temperatureT in first case toT3/2 second case. As a consequence theT0 value 3/2 times larger than for material. Moreover, we get further doubling ofT0 one-dimensional wire. These results are independent on magnitude ofJth hold also other laser materials, provided Auger recombination negligible as GaAs.
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