High K artificial lattices for capacitor applications to use in CU or AL BEOL

摘要: An improved and new process of fabricating high dielectric constant MIM capacitors. These capacitor met all the stringent requirements needed for both RF analog circuit applications. For capacitor, metal is comprised copper electrodes in a dual damascene process. The versus total thickness super lattices controlled by number layers either 4/4 , 2/2, 1/1 artificial layers. Hence film can be easily controlled. Enhancement because interface. Dielectric constants near 900 achieved 250 Angstrom thick lattices. MBE, molecular beam epitaxy or ALCVD, atomic layer CVD techniques used this type growth