3.1 GeV-xenon ion latent tracks in Bi2Fe4O9: Mössbauer and electron microscopy studies
作者： D. Groult , M. Hervieu , N. Nguyen , B. Raveau
DOI: 10.1016/0022-4596(88)90216-2
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摘要: Abstract 3.1 GeV-xenon ions irradiation effects induced in bismuth iron oxide Bi2Fe4O9 have been investigated by Mossbauer spectroscopy and electron microscopy. The amorphization of the crystalline compound achieved for a fluence close to 5 × 1012 cm−2 has interpreted on basis track mechanism with damage rate expressed as Fd = 1 −exp(−πR2∅t) where R is radius.
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