作者: Kazuhiro Kurata , Yoshiteru Keikoin , Kozi Honma , Yuichi Ono , Masahiko Ogirima
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摘要: A longitudinal epitaxial growth device for making a mixed crystal of III b -V group intermetallic compound semiconductor in which means inverting the reaction gas flow is disposed between gallium source and substrate, height reduced, length mixing band made sufficiently long.