Primary flow CVD apparatus comprising gas preheater and means for substantially eddy-free gas flow

作者: Richard A. Seilheimer , Arthur J. Learn , Nicholas E. Miller , Dale R. Du Bois

DOI:

关键词:

摘要: A chemical vapor deposition apparatus comprising a hot wall reaction tube, one or more gas preheaters, exhaust outlet, and substantially eddy free flow control means for passing gases in laminar from preheater to the outlet. The includes tube flange positioned be relationship with end of wafer boat zone, having curved surface extending zone outer directing out into while maintaining state flow. One comprises first heating removable baffle. second two cylindrical heater inner deformations. each can have plurality injector ports central axes cause immediate mixing injected therefrom. An alternate passageway formed by concentric vacuum chamber tubes.

参考文章(31)
Rainer Moller, Horst Stelzer, Michael Kleinert, Apparatus for guiding gas for LP CVD processes in a tube reactor ,(1982)
Hironori Sonobe, Mitsutoshi Koyama, Koichi Takahashi, Vertical heat-treatment apparatus for semiconductor parts ,(1991)
Roger E. Logar, Particulate-free epitaxial process ,(1994)
Kazuhiro Kurata, Yoshiteru Keikoin, Kozi Honma, Yuichi Ono, Masahiko Ogirima, Epitaxial growth device ,(1971)
James E Herlinger, Gary W Yee, Katsuhito Nishikawa, Donald L Schuman, Lynn Weber, Jean Benoit Hugues, Method and apparatus for transferring wafers between cassettes and a boat ,(1986)
Thomas E. Tang, Dane E. Bailey, Vertical LPCVD reactor ,(1990)