作者: R. Schwerdtner , M. Wiemer , J. Froemel , Th. Gessner
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摘要: The AuSi eutectic bond process is a well known and important technique in the field of single chip packaging. When it comes to low-cost hermetic sealed packages for MEMS/NEMS sensors actuators this technology has its decisive merits. bonding low-temperature with an electric conductive alloy. To achieve reliable 100% yield quite difficult, especially large areas. In our institute we made several analyses different parameters surface properties variations. results show that condition silicon side wafer pair as are very factors relation bond. We also did investigations on thickness gold layer. Unlike conventional technologies [1] does not need μm thick layers. were able 1500nm even 150nm thin Another result found was good only depending value applied temperature time, there influence because heat flow pressure. presentation would like introduce experience, plus will present coherences parameter variations achieving yield.Copyright © 2007 by ASME