Method of manufacturing semiconductor device, semiconductor device, and substrate processing apparatus
作者： Hideharu Itatani , Yuji Takebayashi , Sadayoshi Horii , Hirohisa Yamazaki , Arito Ogawa
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摘要: A high-k capacitor insulating film stable at a higher temperature is formed. There provided method of manufacturing semiconductor device. The comprises: forming an amorphous first comprising element on substrate; adding second different from the to so as form and annealing predetermined third by changing phase film. concentration added controlled according temperature.
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