Enhancement of dielectric constant in HfO2 thin films by the addition of Al2O3

摘要: HfO2 films with an enhanced dielectric constant, prepared through phase transition engineering by the addition of Al2O3, were deposited plasma-enhanced atomic layer deposition adopting a supercycle concept. After annealing step at 700°C, tetragonal phase, which is high-temperature HfO2, was stabilized completely room temperature and crystallographic direction changed to preferred (002) orientation. As result, Hf aluminate film (002)-oriented had constant 47, approximately twice as large reported value monoclinic phase.