作者: Nathan S. Jacobson , Don J. Roth , Richard W. Rauser , James D. Cawley , Donald M. Curry
DOI: 10.1016/J.SURFCOAT.2008.09.013
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摘要: The oxidation of SiC-protected carbon/carbon through machined slots and naturally occurring craze cracks in the SiC was studied. slot crack geometries were characterized, subsurface substrate at temperatures 1000 to 1300 °C air assessed using weight change, X-ray computed tomography, optical microscopy sections. Rate constants derived from these measurements compared with a two-step diffusion control model carbon oxidation. This included gas phase channel coating growing cavity within substrate. Oxidation sections most accurate also agreed well model. loss higher than which is likely due other contributions net besides