Rapid Thermal Annealed Tiw/Ti Contact Metallization for Advanced Vlsi Si Circuits
作者： Henry W Chung , Agnes T. Yao
DOI: 10.1557/PROC-181-199
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sci-hub.se 参考文章(6)
Chung Yu Ting, Marc Wittmer, Investigation of the Al/TiSi2/Si contact system Journal of Applied Physics. ,vol. 54, pp. 937- 943 ,(1983) , 10.1063/1.332018
Roger A. Haken, Application of the self-aligned titanium silicide process to very large-scale integrated n-metal-oxide-semiconductor and complementary metal-oxide-semiconductor technologies Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. ,vol. 3, pp. 1657- 1663 ,(1985) , 10.1116/1.582957
S. S. Cohen, M. J. Kim, B. Gorowitz, R. Saia, T. F. McNelly, G. Todd, Direct W–Ti contacts to silicon Applied Physics Letters. ,vol. 45, pp. 414- 416 ,(1984) , 10.1063/1.95241
F. L. Hutson, D. E. Ramaker, V. M. Bermudez, M. A. Hoffbauer, Electron stimulated desorption and the role of backscattered electrons Journal of Vacuum Science and Technology. ,vol. 3, pp. 1657- 1661 ,(1985) , 10.1116/1.573032
J. Hui, S. Wong, J. Moll, Specific contact resistivity of TiSi 2 to P + and n + junctions IEEE Electron Device Letters. ,vol. 6, pp. 479- 481 ,(1985) , 10.1109/EDL.1985.26199
S.M. Sze, Kwok K. Ng, Physics of Semiconductor Devices: Sze/Physics John Wiley & Sons, Inc.. ,(2006) , 10.1002/0470068329