Influence of melt depth in laser crystallized poly-Si thin film transistors

摘要: The influence of film thickness and incident excimer laser energy density on the properties poly-Si thin transistors has been investigated a coherent pattern behavior identified which establishes controlled melt-through as key condition for achieving high quality devices. conditions were correlated with appearance large grains gave consistent results from both n- p-channel devices, carrier mobilities more than 150 80 cm2/V s, respectively, leakage currents less 2×10−14 A/μm. From study static irradiations, using semi-Gaussian beam, are shown to be super lateral grain growth (SLG) model. trailing edge when used in swept mode, demonstrated play an important role extending size window this effect by re-setting material into SLG regime.