Poly-Si TFT Technology and Architecture

作者: S. D. Brotherton

DOI: 10.1007/978-3-319-00002-2_7

关键词:

摘要: … to Ni contamination of the poly-Si. The qualitative relationship between poly-Si quality and Ni … 7.22 were obtained from films deposited by PECVD from TEOS (tetraethylorthosilicate) and …

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