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作者: S. D. Brotherton
DOI: 10.1007/978-3-319-00002-2_7
关键词:
摘要: … to Ni contamination of the poly-Si. The qualitative relationship between poly-Si quality and Ni … 7.22 were obtained from films deposited by PECVD from TEOS (tetraethylorthosilicate) and …
Semiconductor Science and Technology,2015, 引用: 35