Method for forming barrier layer for copper metallization
作者： Tetsuo Matsuda , Hisashi Kaneko , Tadashi Iijima
DOI:
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摘要: A method comprises forming a barrier layer for copper metallization, selectively silicon film on surface of wiring formed the main semiconductor substrate, and reacting with non-copper metal and/or nitrogen to form in self-aligned manner relative wiring. In method, capacitance increase wirings is prevented, has satisfactory property protecting wirings.
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