Schemes for forming barrier layers for copper in interconnect structures
作者： Tien-I Bao , Hai-Ching Chen , Chen-Hua Yu
DOI:
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摘要: A method of forming a semiconductor structure includes providing substrate; low-k dielectric layer over the embedding conductive wiring into layer; and thermal soaking in carbon-containing silane-based chemical to form barrier on wiring. lining is formed opening for The may comprise same materials as layer, be recessed before contain metal that can silicided.
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