Interconnect structure having a silicide/germanide cap layer
作者： Chen-Hua Yu , Hung Chun Tsai , Ting-Yu Shen , Yung-Cheng Lu , Hui-Lin Chang
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摘要: An interconnect structure of an integrated circuit and a method for forming the same are provided. The includes semiconductor substrate, low-k dielectric layer over conductor in layer, cap on conductor. has at least top portion comprising metal silicide/germanide.
lens.org 参考文章(15)
Mandyam Sriram, Hui-Jung Wu, Kaushik Chattopadhyay, Yongsik Yu, Roey Shaviv, Protective self-aligned buffer layers for damascene interconnects ,(2007)
Manu J. Tejwani, Kris V. Srikrishnan, Rajiv V. Joshi, Method of making corrosion resistant, low resistivity copper for interconnect metal lines ,(1992)
Kangguo Cheng, Deok-kee Kim, Oh-Jung Kwon, Carl J. Radens, Method for forming a self-aligned contact with a silicide or damascene conductor and the structure formed thereby ,(2004)
Chen-Hua Yu, Horng-Huei Tseng, Method for fabricating copper interconnects ,(2003)
A Baba, H Aramaki, T Sadoh, T Tsurushima, None, Growth kinetics of CoSi formed by ion beam irradiation at room temperature Journal of Applied Physics. ,vol. 82, pp. 5480- 5483 ,(1997) , 10.1063/1.366460
S. Hymes, S. P. Murarka, C. Shepard, W. A. Lanford, Passivation of copper by silicide formation in dilute silane Journal of Applied Physics. ,vol. 71, pp. 4623- 4625 ,(1992) , 10.1063/1.350765
Chen-Hua Yu, Syun-Ming Jang, Chung-Shi Liu, Tien-I Bao, Method for selective growth of Cu3 Ge or Cu5 Si for passivation of damascene copper structures and device manufactured thereby ,(1999)
Stephen T. Chambers, Christine S. Hau-Riege, Andrew W. Ott, Valery M. Dubin, Enhancement of an interconnect ,(2002)
Chen-Hua Yu, Horng-Huei Tseng, Bonding structure and fabrication thereof ,(2004)
Hasan Nejad, Ravi Iyer, Gordon A. Haller, Thomas Arthur Figura, Methods of forming devices associated with semiconductor constructions ,(2005)