Method for forming copper-containing metal studs
作者： Joost Waeterloos , Gilbert Declerck , Roger Palmans
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摘要: The method of the present invention is related to fabrication a copper-based multilevel interconnect structure. This structure based on formation vertical metal connections through copper-containing stud growth an underlying horizontal pattern, followed by encapsulation step against copper diffusion into surrounding dielectric, i.e. insulating layers. particular interest when layers used obtain this are polymer with low dielectric constant and preferably high degree planarization.
lens.org 参考文章(11)
Jeffrey E. Brighton, Bobby A. Roane, Methods for forming self-aligned conductive pillars on interconnects ,(1987)
Ming-Fea Chow, Frank B. Kaufman, William Lislie Guthrie, Method of forming fine conductive lines, patterns and connnectors ,(1986)
Prahalad K. Vasudev, Valery M. Dubin, Bin Zhao, Yosef Shacham-Diamand, Chiu H. Ting, Selective electroless copper deposited interconnect plugs for ULSI applications ,(1996)
Ju-Don T. Pan, Method of reworking an electrical multilayer interconnect ,(1989)
C-K Hu, B Luther, FB Kaufman, J Hummel, C Uzoh, DJ Pearson, None, Copper interconnection integration and reliability Thin Solid Films. ,vol. 262, pp. 84- 92 ,(1995) , 10.1016/0040-6090(94)05807-5
Minas H. Tanielian, Kishore K. Chakravorty, Method for producing a planar surface on which a conductive layer can be applied ,(1991)
Jeffrey P. Gambino, Evan G. Colgan, James W. Mayer, Jian Li, Self-aligned process for capping copper lines ,(1992)
James G. Ryan, Badih El-Kareh, Method of making flexible interconnections with dual-metal-dual-stud structure ,(1996)
Eliot Kent Broadbent, Method for manufacturing a planar electrical interconnection utilizing isotropic deposition of conductive material ,(1988)