Interconnects with improved reliability

作者: Hsien-Wei Chen , Shin-puu Jeng , Hsueh-Chung Chen

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摘要: An interconnect architecture with improved reliability. rounded top corners is inlaid in a dielectric layer. A filler borders the along of interconnect.

参考文章(11)
Kevin S. Petrarca, Mahadevaiyer Krishnan, Kenneth Jay Stein, Donald Canaperi, Richard P. Volant, Encapsulated metal structures for semiconductor devices and MIM capacitors including the same ,(2003)
Daniel J. Loop, Gregory Norman Hamilton, Dean J. Denning, Brian G. Anthony, Sam S. Garcia, Bradley P. Smith, Md. Rabiul Islam, Method for forming a barrier layer for use in a copper interconnect ,(2000)
Terry Spooner, Matthew S. Angyal, John A. Fitzsimmons, Jia Lee, Theordorus E. Standaert, Glenn A. Biery, Stephen M. Gates, Habib Hichri, Stephen E. Greco, Reliable low-k interconnect structure with hybrid dielectric ,(2002)
Richard W. Sexton, James E. Harrison, Electrical contact termination for a flexible circuit ,(1999)
Laertis Economikos, Jeffrey P. Gambino, Chandrasekhar Narayan, Peter D. Hoh, Richard A. Conti, David M. Dobuzinsky, Kenneth C. Arndt, Integrated circuits having reduced stress in metallization ,(1999)
John E. Amato, Fwu-Iuan Hshieh, Koon Chong So, An integrated circuit resistant to the formation of cracks in a passivation layer ,(2002)
Tetsuo Fukada, Yoshihiko Toyoda, Makiko Hasegawa, Takeshi Mori, Semiconductor device having interconnection and adhesion layers ,(1998)