Single-sided multilevel structure for silicon pressure transducers by masked-maskless etching technology

摘要: A novel singled-sided multilevel island-beam-diaphragm structure has been designed and fabricated for an extremely high sensitivity pressure transducers by using a anisotropic etching technology called masked-maskless technology. The consists of two small islands overrange protection, shallow masses stress concentration, three thin beams on deep-etched diaphragm piezoresistors location. prototype transducer 400 pa operation range 0.6% nonlinearity tested.