作者: Shanying Li , Xiaoyan Li , Haipeng Zhao
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摘要: CdTe nanowires (NWs) are synthesised via a thermal evaporation process, and the structure characterisations reveal that as-synthesised NWs single crystalline with zinc blende crystal growth direction of [111]. Nano-field-effect transistors fabricated based on individual NWs, electrical properties demonstrate have p-type conductivity mobility ( μ h ) 6.8 × 10 - 2 cm V 1 S and carrier concentration n about 3.6 19 3 . This significant is attributed to intrinsic defects Cd vacancies in then, high-aspect ratio nearly perfect single-crystalline quality one-dimensional conducive excellent electron transfer characteristics. The will be very attractive candidates for nanoelectronic devices.