p-type conduction in nitrogen-doped ZnS nanoribbons
作者： G. D. Yuan , W. J. Zhang , W. F. Zhang , X. Fan , I. Bello
DOI: 10.1063/1.3025846
关键词:
摘要: We report reproducible p-type transport properties in nitrogen-doped ZnS nanoribbons (NRs) synthesized by applying ammonia gas as the acceptor source. Field-effect transistors fabricated from individual NRs revealed behavior of and significant enhancement upon annealing argon ambient. Annealing-induced conversion highly insulating to conducting was attributed activation N acceptors passivated states NS–H bonding.
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