Preparation and characterization of cubic lattice ZnS:Na films with (111) preferred orientation
作者： Shu-wen Xue , Jian Chen , Chang-wei Zou
DOI: 10.1007/S11801-014-3206-8
关键词:
摘要: ZnS:Na thin films with (111) preferred orientation were deposited on glass substrates by vacuum evaporation method. The as-prepared annealed in flowing argon at 400–500 °C to improve the film crystallinity and electrically activate dopants. structural, optical electrical properties of are investigated X-ray diffraction (XRD), photoluminescence (PL), transmittance measurements four-point probe Results show that amorphous, exhibit after annealing 400 −500 °C. PL emissions 414 nm 439 enhanced due increase intrinsic defects induced thermal annealing. However, all samples high resistivity heavy self-compensation.
springer.com
harvard.edu
sci-hub.se 参考文章(17)
Amorphous and liquid semiconductors Springer US. ,(1974) , 10.1007/978-1-4615-8705-7
T.V. Butkhuzi, T.G. Tchelidze, E.G. Chikoidze, N.P. Kekelidze, Silver doped p-type ZnS crystals Physica Status Solidi B-basic Solid State Physics. ,vol. 229, pp. 365- 370 ,(2002) , 10.1002/1521-3951(200201)229:1<365::AID-PSSB365>3.0.CO;2-G
S. Kishimoto, A. Kato, A. Naito, Y. Sakamoto, S. Iida, Attempts of Homo p–n Junction Formation in ZnS by Impurity Co‐Doping with Vapor Phase Epitaxy Physica Status Solidi B-basic Solid State Physics. ,vol. 229, pp. 391- 393 ,(2002) , 10.1002/1521-3951(200201)229:1<391::AID-PSSB391>3.0.CO;2-K
G. D. Yuan, W. J. Zhang, W. F. Zhang, X. Fan, I. Bello, C. S. Lee, S. T. Lee, p-type conduction in nitrogen-doped ZnS nanoribbons Applied Physics Letters. ,vol. 93, pp. 213102- ,(2008) , 10.1063/1.3025846
Wei Zhang, Xianghua Zeng, Junfeng Lu, Haitao Chen, None, Phase controlled synthesis and optical properties of ZnS thin films by pulsed laser deposition Materials Research Bulletin. ,vol. 48, pp. 3843- 3846 ,(2013) , 10.1016/J.MATERRESBULL.2013.05.084
E. A. Davis, N. F. Mott, Conduction in non-crystalline systems V. Conductivity, optical absorption and photoconductivity in amorphous semiconductors Philosophical Magazine. ,vol. 22, pp. 0903- 0922 ,(1970) , 10.1080/14786437008221061
A. Abounadi, M. Di Blasio, D. Bouchara, J. Calas, M. Averous, O. Briot, N. Briot, T. Cloitre, R. L. Aulombard, B. Gil, Reflectivity and photoluminescence measurements in ZnS epilayers grown by metal-organic chemical-vapor deposition Physical Review B. ,vol. 50, pp. 11677- 11683 ,(1994) , 10.1103/PHYSREVB.50.11677
Qiang Peng, Jiansheng Jie, Chao Xie, Li Wang, Xiwei Zhang, Di Wu, Yongqiang Yu, Chunyan Wu, Zhi Wang, Peng Jiang, None, Nano-Schottky barrier diodes based on Sb-doped ZnS nanoribbons with controlled p-type conductivity Applied Physics Letters. ,vol. 98, pp. 123117- ,(2011) , 10.1063/1.3569590
Tetsuya Yamamoto, Seiichi Kishimoto, Seishi Iida, Control of valence states for ZnS by triple-codoping method Physica B-condensed Matter. ,vol. 308, pp. 916- 919 ,(2001) , 10.1016/S0921-4526(01)00842-0
M. McLaughlin, H. F. Sakeek, P. Maguire, W. G. Graham, J. Molloy, T. Morrow, S. Laverty, J. Anderson, Properties of ZnS thin films prepared by 248-nm pulsed laser deposition Applied Physics Letters. ,vol. 63, pp. 1865- 1867 ,(1993) , 10.1063/1.110656