A microstructural study of low resistivity tin-doped indium oxide prepared by d.c. magnetron sputtering

摘要: The microstructure of low resistivity (∼ 2 × 10−4 Ω cm) Sn-doped In2O3 (ITO) thin films prepared by multipass d.c. magnetron sputter deposition with an ITO (10 wt.% SnO2) target onto soda-lime glass substrates was investigated using plan-view and cross-sectional transmission electron microscopy (TEM), scanning (SEM) X-ray diffraction. Each pass the process deposits a 110 nm thick layer. substrate temperature 400 °C during chamber back-filled to pressure 1 10−3 Torr mixture Ar 0.8–1.0 at.% O2. Plan-view TEM studies combined SEM observations film surface reveal that sputtered possesses polycrystalline structure in which 200–350 grains are subdivided into highly oriented regions 10–30 diameter. diffractometry show as-deposited have strong 〈100〉 texture prominent columnar growth through-thickness direction.