Impact of Current Filaments on the Material and Output Characteristics of GaAs Photoconductive Switches
作者： Cheng Ma , Wei Shi , Mengxia Li , Huaimeng Gui , Nana Hao
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摘要: The current filament phenomena in high gain gallium arsenide (GaAs) photoconductive semiconductor switches (PCSS) always draw a significant influence on the lifetime of devices. This paper presents study over material properties and output characteristics GaAs PCSS. working principle filaments has been analyzed it is shown that performance PCSS degrades due to heating effects filaments. It observed effect reduces dark resistivity material; furthermore, gradually damages electrode PCSS, leading breakdown relationship between turn-ON process damage
sci-hub.se 参考文章(18)
G.M. Loubriel, F.J. Zutavern, M.W. O'Malley, Toward pulsed power uses for photoconductive semiconductor switches: Closing switches ieee international pulsed power conference. ,(1987)
F.J. Zutavern, G.M. Loubriel, B.B. McKenzie, W.M. O'Malley, R.A. Hamil, L.P. Schanwald, H.P. Hjalmarson, Photoconductive semiconductor switch (pcss) recovery ieee international pulsed power conference. pp. 412- 417 ,(1989) , 10.1109/PPC.1989.767511
W.C. Nunnally, High-power microwave generation using optically activated semiconductor switches IEEE Transactions on Electron Devices. ,vol. 37, pp. 2439- 2448 ,(1990) , 10.1109/16.64516
P. M. Smith, M. Inoue, Jeffrey Frey, Electron velocity in Si and GaAs at very high electric fields Applied Physics Letters. ,vol. 37, pp. 797- 798 ,(1980) , 10.1063/1.92078
Tomoki Inada, Yohei Otoki, Katsumi Ohata, Shuichi Taharasako, Shoji Kuma, Effects of thermal history during LEC growth on behavior of excess arsenic in semi-insulating GaAs Journal of Crystal Growth. ,vol. 96, pp. 327- 332 ,(1989) , 10.1016/0022-0248(89)90529-0
Richard A. Morrow, Model of EL2 formation in GaAs Journal of Applied Physics. ,vol. 70, pp. 6782- 6789 ,(1991) , 10.1063/1.349853
G. M. Martin, J. P. Farges, G. Jacob, J. P. Hallais, G. Poiblaud, Compensation mechanisms in GaAs Journal of Applied Physics. ,vol. 51, pp. 2840- 2852 ,(1980) , 10.1063/1.327952
Chi H. Lee, Picosecond optoelectronic switching in GaAs Applied Physics Letters. ,vol. 30, pp. 84- 86 ,(1977) , 10.1063/1.89297
D. H. Auston, Picosecond optoelectronic switching and gating in silicon Applied Physics Letters. ,vol. 26, pp. 101- 103 ,(1975) , 10.1063/1.88079
R. Zucca, Electrical compensation in semi‐insulating GaAs Journal of Applied Physics. ,vol. 48, pp. 1987- 1994 ,(1977) , 10.1063/1.323906