Multiferroic BiFeO3 thin films deposited on SrRuO3 buffer layer by rf sputtering
作者： R. Y. Zheng , X. S. Gao , Z. H. Zhou , J. Wang
DOI: 10.1063/1.2437163
关键词:
摘要: SrRuO3 (SRO) acts as an effective buffer layer for growth of multiferroic BiFeO3 (BFO) thin films deposited on Pt∕TiO2∕SiO2∕Si substrates by radio frequency sputtering. Phase identification using x-ray diffraction and texture studies atomic force microscopy show that the SRO promotes crystallization formation perovskite phase at lowered temperature. It significantly reduces leakage current BFO films, giving rise to a much improved square ferroelectric hysteresis loop, in contrast poor loop bare substrate. A enlarged remnant polarization (2Pr) 144μC∕cm2 coercive field (Ec) 386kV∕cm were obtained with film SRO∕Pt∕TiO2∕SiO2∕Si 600°C. The also shows large nonvolatile (ΔP=Psw−Pnsw) 122μC∕cm2 20μs, which promises excellent performance random access memories. Further interestingly, it exhibits little fatig...
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