Method of graphene manufacturing
作者： Wlodzimierz Strupinski
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摘要: The present invention relates to a method for manufacturing graphene by vapour phase epitaxy on substrate comprising surface of SiC, characterized in that the process sublimation silicon from is controlled flow an inert gas or other than through epitaxial reactor. also obtained this method.
lens.org 参考文章(16)
Peter Werner Sutter, Eli Anguelova Sutter, Monolayer and/or few-layer graphene on metal or metal-coated substrates ,(2013)
Michael John O'loughlin, Joseph John Sumakeris, Reduction of carrot defects in silicon carbide epitaxy ,(2004)
Mikael Syvajarvi, Tihomir Iakimov, Rositsa Yakimova, Process for growth of graphene ,(2011)
J. Krupka, W. Strupinski, Measurements of the sheet resistance and conductivity of thin epitaxial graphene and SiC films Applied Physics Letters. ,vol. 96, pp. 082101- ,(2010) , 10.1063/1.3327334
Wlodek Strupiński, Rafał Bożek, Jolanta Borysiuk, Kinga Kościewicz, Andrzej Wysmolek, Roman Stepniewski, Jacek M. Baranowski, Growth of Graphene Layers on Silicon Carbide Materials Science Forum. pp. 199- 202 ,(2009) , 10.4028/WWW.SCIENTIFIC.NET/MSF.615-617.199
W. Strupinski, K. Grodecki, A. Wysmolek, R. Stepniewski, T. Szkopek, P. E. Gaskell, A. Grüneis, D. Haberer, R. Bozek, J. Krupka, J. M. Baranowski, Graphene epitaxy by chemical vapor deposition on SiC. Nano Letters. ,vol. 11, pp. 1786- 1791 ,(2011) , 10.1021/NL200390E
A. Drabińska, K. Grodecki, W. Strupiński, R. Bożek, K. P. Korona, A. Wysmołek, R. Stępniewski, J. M. Baranowski, Growth kinetics of epitaxial graphene on SiC substrates Physical Review B. ,vol. 81, pp. 245410- ,(2010) , 10.1103/PHYSREVB.81.245410
S. Weingart, C. Bock, U. Kunze, K.V. Emtsev, Th. Seyller, L. Ley, Influence of the growth conditions of epitaxial graphene on the film topography and the electron transport properties Physica E-low-dimensional Systems & Nanostructures. ,vol. 42, pp. 687- 690 ,(2010) , 10.1016/J.PHYSE.2009.11.006
K. V. Emtsev, F. Speck, Th. Seyller, L. Ley, J. D. Riley, Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study Physical Review B. ,vol. 77, pp. 155303- ,(2008) , 10.1103/PHYSREVB.77.155303
Alfonso Reina, Xiaoting Jia, John Ho, Daniel Nezich, Hyungbin Son, Vladimir Bulovic, Mildred S. Dresselhaus, Jing Kong, Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition Nano Letters. ,vol. 9, pp. 30- 35 ,(2009) , 10.1021/NL801827V