DISSIPATION OF CHARGES IN SILICON NANOCRYSTALS EMBEDDED IN SiO2 DIELECTRIC FILMS: AN ELECTROSTATIC FORCE MICROSCOPY STUDY
作者： C. Y. NG , H. W. LAU , T. P. CHEN , O. K. TAN , V. S. W. LIM
DOI: 10.1142/S0219581X05003541
关键词:
摘要: In this paper, we report a mapping of charge transport in silicon nanocrystals (nc-Si) embedded SiO2 dielectric films with electrostatic force microscopy (EFM). By using contact EFM mode, positive and negative charges can be deposited on nc-Si. We found that the diffusion from charged nc-Si to surrounding neighboring uncharged is dominant mechanism during decay. A longer decay time was observed for wider area stored (i.e. 3 spots) due being blocked by This result consistent increase cloud size lower change percentage spots.
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