Electronic properties of silicon nanocrystallites obtained by SiOx (x<2) annealing

摘要: Nanocrystal-based devices are possible candidates for future electronics. In this context, we have studied the electronic properties of Si nanocrystals (nc-Si) embedded in a SiO 2 matrix. This work is devoted to characterization nc-Si by means morphological, optical and electrical techniques. Sio x (x < 2) layers deposited low-pressure chemical vapor deposition (LPCVD). Morphological measurements shown that as-deposited homogeneous thermal annealing induces precipitation excess silicon into nanocrystallites. Photoluminescence (PL) show large emission spectrum around 1.5 eV agreement with literature results confined levels 5-nm dots. Current-voltage (I-V) recorded at different temperatures on metal-oxide-semiconductor (MOS) capacitors analysed terms structural modifications induced annealing. The Poole-Frenkel conduction behavior. annealed samples, it appears current follows hopping transport mechanism. understood as direct tunneling from dots Finally, able store carriers therefore good candidate non-volatile memory applications. Charging curves presented discussed model previously validated MOS structures obtained pure silane deposition.